 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| PolarHVTM Power MOSFET N-Channel Enhancement Mode Preliminary Data Sheet IXTA 12N50P IXTP 12N50P RDS(on) VDSS ID25 = 500 = 12 0.5 www..com V A Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGS = 1 M Continuous Transient TC = 25C TC = 25C, pulse width limited by TJM TC = 25C TC = 25C TC = 25C IS IDM, di/dt 100 A/s, VDD VDSS, TJ 150C, RG = 10 TC = 25C Maximum Ratings 500 500 30 40 12 20 12 24 600 10 200 -55 ... +150 150 -55 ... +150 V V V V A A A mJ mJ TO-263 (IXTA) G S (TAB) TO-220 (IXTP) G V/ns W C C C C C G = Gate S = Source DS (TAB) D = Drain TAB = Drain Features International standard packages Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Advantages Easy to mount Space savings High power density 1.6 mm (0.062 in.) from case for 10 s Maximum tab temperature for soldering TO-263 package for 10s Mounting torque TO-220 TO-263 (TO-220) 300 260 Md Weight 1.13/10 Nm/lb.in. 4 3 g g Symbol Test Conditions (TJ = 25C, unless otherwise specified) VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 A VDS = VGS, ID = 250A VGS = 20 VDC, VDS = 0 VDS = VDSS VGS = 0 V TJ = 125C Characteristic Values Min. Typ. Max. 500 2.5 5.0 100 5 50 V V nA A A VGS = 10 V, ID = 0.5 ID25 Pulse test, t 300 s, duty cycle d 2 % 500 m (c) 2005 IXYS All rights reserved DS99322(09/05) IXTA 12N50P IXTP 12N50P Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) Min. Typ. Max. 13 1690 VGS = 0 V, VDS = 25 V, f = 1 MHz 182 16 22 VGS = 10 V, VDS = 0.5 VDSS, ID = ID25 RG = 50 (External) 27 65 20 29 VGS= 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 11 10 S pF pF pF ns ns ns ns nC nC nC 0.62 K/W (TO-220) 0.25 K/W Dim. A A1 b b2 c c2 D D1 E E1 e L L1 L2 L3 L4 R TO-263 (IXTA) Outline www..com gfs Ciss Coss C rss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCK VDS= 10 V; ID = 0.5 ID25, pulse test Pins: 1 - Gate 2, 4 - Drain 3 - Source Millimeter Min. Max. 4.06 2.03 0.51 1.14 0.46 1.14 8.64 7.11 9.65 6.86 2.54 14.61 2.29 1.02 1.27 0 0.46 4.83 2.79 0.99 1.40 0.74 1.40 9.65 8.13 10.29 8.13 BSC 15.88 2.79 1.40 1.78 0.38 0.74 Inches Min. Max. .160 .080 .020 .045 .018 .045 .340 .280 .380 .270 .100 .575 .090 .040 .050 0 .018 .190 .110 .039 .055 .029 .055 .380 .320 .405 .320 BSC .625 .110 .055 .070 .015 .029 Source-Drain Diode Symbol IS ISM VSD t rr Test Conditions VGS = 0 V Repetitive Characteristic Values (TJ = 25C, unless otherwise specified) Min. typ. Max. 12 20 1.5 A A V TO-220 (IXTP) Outline IF = IS, VGS = 0 V, Pulse test, t 300 s, duty cycle d 2 % IF = 3 A -di/dt = 100 A/s 400 ns Pins: 1 - Gate 3 - Source 2 - Drain 4 - Drain IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or moreof the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 6,759,692 IXTA 12N50P IXTP 12N50P Fig. 1. Output Characteristics @ 25C 12 VGS = 10V 10 8V 7V 30 27 24 21 VGS = 10V 8V Fig. 2. Extended Output Characteristics www..com @ 25C I D - Amperes I D - Amperes 8 18 15 12 9 6 3 6V 7V 6 4 6V 2 0 0 1 2 3 4 5 6 7 0 0 3 6 9 12 15 18 21 24 27 30 V D S - Volts Fig. 3. Output Characteristics @ 125C 12 VGS = 10V 10 8V 7V 2.6 2.4 2.2 VGS = 10V V D S - Volts Fig. 4. RDS(on) Norm alized to 0.5 ID25 Value vs. Junction Tem perature R D S ( o n ) - Normalized 2 1.8 1.6 1.4 1.2 1 0.8 I D = 6A I D = 12A I D - Amperes 8 6 6V 4 2 5V 0 0 2 4 6 8 10 12 0.6 0.4 -50 -25 0 25 50 75 100 125 150 V D S - Volts Fig. 5. RDS(on) Norm alized to 0.5 ID25 Value vs. ID 3.1 2.8 VGS = 10V TJ = 125 C 14 12 10 TJ - Degrees Centigrade Fig. 6. Drain Current vs. Case Tem perature R D S ( o n ) - Normalized 2.5 2.2 1.9 1.6 1.3 1 0.7 0 3 6 9 12 15 18 21 24 27 30 TJ = 25 C I D - Amperes 8 6 4 2 0 -50 -25 0 25 50 75 100 125 150 I D - Amperes TC - Degrees Centigrade (c) 2005 IXYS All rights reserved IXTA 12N50P IXTP 12N50P Fig. 7. Input Adm ittance 20 18 16 27 24 21 www..com Fig. 8. Transconductance g f s - Siemens I D - Amperes 14 12 10 8 6 4 2 0 4.5 5 5.5 6 6.5 7 7.5 TJ = 125 C 25 C -40 C 18 15 12 9 6 3 0 0 TJ = -40 C 25 C 125 C 2 4 6 8 10 12 14 16 18 20 V G S - Volts Fig. 9. Source Current vs. Source-To-Drain Voltage 9 8 7 10 9 8 7 VDS = 250V I D = 6A I G = 10mA I D - Amperes Fig. 10. Gate Charge I S - Amperes 6 VG S - Volts TJ = 25 C 0.65 0.7 0.75 0.8 0.85 5 4 3 2 1 0 0.45 0.5 0.55 0.6 TJ = 125 C 6 5 4 3 2 1 0 0 3 6 9 12 15 18 21 24 27 30 V S D - Volts Fig. 11. Capacitance 10000 f = 1MHz 100 Q G - nanoCoulombs Fig. 12. Forw ard-Bias Safe Operating Area Capacitance - picoFarads C iss R DS(on) Limit I D - Amperes 1000 10 25s C oss 100 100s DC 1ms 10ms 1 TJ = 150C TC = 25C 0.1 0 5 10 15 20 25 30 35 40 10 C rs 10 100 1000 V D S - Volts IXYS reserves the right to change limits, test conditions, and dimensions. V D S - Volts IXTA 12N50P IXTP 12N50P www..com Fig. 13. Maxim um Transient Therm al Resistance 1.00 R ( t h ) J C - C / W 0.10 0.01 0.01 0.1 1 10 100 1000 Pulse Width - milliseconds (c) 2005 IXYS All rights reserved |
Price & Availability of IXTA12N50P
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |